Carbon nanolentyi it is possible to use for manufacturing of transistors

The command of scientists-nanohimikov from Stenfordsky University with success has demonstrated, that carbon nanolentyi it is possible to use for manufacturing of transistors which can make subsequently the integrated payments working with higher speed in comparison with existing analogues for an abacus of less intensive heating. Grafenovyie nanolentyi are quite suitable material for manufacturing of the field transistors which are in standard knots of all microcircuits. The width nanolent, produced by scientists Stenforda under the guidanceof Hongdzhi Daya (Hongjie Dai) makes less than ten nanometrov; in a mode of the transistor they with success can work as the transistor even at a room temperature while previous workings out functioned only on low temperatures owing to the bolshey thickness.

All digital systems in the development tend to miniaturization the size and the transistors, accordingly, should be reduced, obliged is high-grade to work at a room temperature. Silicon has, unfortunately, is minimum possible size of knot at which the further miniaturization becomes impossible. Therefore scientists should search for new materials. Certainly, a batch production grafenovyih nanolent new type hardly probable can begin in the near future, however already researches of their properties, and also tests now are actively carried out, marks MobileDevice.